PDTA115TM,315 NXP Semiconductors, PDTA115TM,315 Datasheet - Page 15

• Manufacturer Part Number: PDTA115TM,315
• Description: TRANS PNP W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 100 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2113-2; 934058821315; PDTA115TM T/R

NXP Semiconductors
10. Revision history
Table 10.
PDTA115T_SER_5
Product data sheet
Document ID
PDTA115T_SER_5
Modifications:
PDTA115T_SER_4
PDTA115TT_3
PDTA115TT_2
PDTA115TT_1
Revision history
Release date
20090902
20050405
20040907
20040518
20040323
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•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 3 “Package outline SOT416
Figure 4 “Package outline SOT346
Figure 9 “Package outline SOT23
Figure 10 “Package outline SOT323
Rev. 05 — 2 September 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
Objective data sheet
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
(TO-236AB)”: updated
(SC-75)”: updated
(SC-59/TO-236)”: updated
(SC-70)”: updated
Change notice
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-
-
-
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PDTA115T series
Supersedes
PDTA115T_SER_4
PDTA115TT_3
PDTA115TT_2
PDTA115TT_1
-
© NXP B.V. 2009. All rights reserved.
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