PDTA123JM,315 NXP Semiconductors, PDTA123JM,315 Datasheet

TRANS PNP 50V 100MA SOT883

PDTA123JM,315

Manufacturer Part Number
PDTA123JM,315
Description
TRANS PNP 50V 100MA SOT883
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTA123JM,315

Package / Case
SC-101, SOT-883
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhm
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057161315
PDTA123JM T/R
PDTA123JM T/R
Product data sheet
Supersedes data of 2003 Apr 14
DATA SHEET
PDTA123J series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
DISCRETE SEMICONDUCTORS
2004 Aug 02

Related parts for PDTA123JM,315

PDTA123JM,315 Summary of contents

Page 1

DATA SHEET PDTA123J series PNP resistor-equipped transistors 2.2 kΩ kΩ Product data sheet Supersedes data of 2003 Apr 14 DISCRETE SEMICONDUCTORS 2004 Aug 02 ...

Page 2

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. ...

Page 3

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTA123JS handbook, halfpage PDTA123JE PDTA123JEF handbook, halfpage PDTA123JK PDTA123JT PDTA123JU Top view PDTA123JM handbook, halfpage 2 1 Bottom view 2004 Aug 02 SIMPLIFIED OUTLINE AND SYMBOL MAM338 PDTA123J series ...

Page 4

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO V input voltage I positive negative I output current (DC peak collector current CM P total power dissipation ...

Page 5

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat V input-off voltage i(off) V input-on voltage ...

Page 6

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ PACKAGE OUTLINES Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION IEC SOT416 2004 Aug 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 ...

Page 7

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 0.8 0.33 0.2 1.7 mm 0.6 0.23 0.1 1.5 OUTLINE VERSION IEC SOT490 2004 Aug scale 0.95 1.7 0.5 1.0 0.5 0.75 1.5 0.3 ...

Page 8

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 1.3 0.1 0.50 0.26 mm 1.0 0.013 0.35 0.10 OUTLINE VERSION IEC SOT346 2004 Aug scale 3.1 1.7 3.0 1.9 0.95 2.7 1.3 2.5 ...

Page 9

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC ...

Page 10

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 11

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Aug scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 12

... NXP Semiconductors PNP resistor-equipped transistors 2.2 kΩ kΩ Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 2004 Aug scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 13

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 14

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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