PDTB123YT,215 NXP Semiconductors, PDTB123YT,215 Datasheet - Page 8
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PDTB123YT,215
Manufacturer Part Number
PDTB123YT,215
Description
TRANS PNP W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.PDTB123YT215.pdf
(10 pages)
Specifications of PDTB123YT,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.219
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
500 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058983215
PDTB123YT T/R
PDTB123YT T/R
PDTB123YT T/R
PDTB123YT T/R
NXP Semiconductors
10. Revision history
Table 10.
PDTB123Y_SER_2
Product data sheet
Document ID
PDTB123Y_SER_2
Modifications:
PDTB123Y_SER_1
Revision history
Release date
20091116
20050427
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
PDTB123Y series
Supersedes
PDTB123Y_SER_1
-
© NXP B.V. 2009. All rights reserved.
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