PBRN113ZT,215 NXP Semiconductors, PBRN113ZT,215 Datasheet - Page 15
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PBRN113ZT,215
Manufacturer Part Number
PBRN113ZT,215
Description
TRANS NPN W/RES 40V SOT-23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PBRN113ZT215.pdf
(17 pages)
Specifications of PBRN113ZT,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 300mA, 5V
Vce Saturation (max) @ Ib, Ic
1.15V @ 8mA, 800mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
1 KOhm
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Peak Dc Collector Current
700 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058987215
PBRN113ZT T/R
PBRN113ZT T/R
PBRN113ZT T/R
PBRN113ZT T/R
NXP Semiconductors
11. Revision history
Table 10.
PBRN113Z_SER_1
Product data sheet
Document ID
PBRN113Z_SER_1
Revision history
Release date
20070226
Data sheet status
Product data sheet
Rev. 01 — 26 February 2007
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k
Change notice
-
PBRN113Z series
Supersedes
-
© NXP B.V. 2007. All rights reserved.
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