MMUN2238LT1G ON Semiconductor, MMUN2238LT1G Datasheet - Page 15

• Manufacturer Part Number: MMUN2238LT1G
• Description: TRANS BRT NPN 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2238LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
T
C
A
/I
V
B
= −25°C
R,
10
75°C
Figure 59. Output Capacitance
= 10
REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
Figure 57. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G
20
40
CE(sat)
30
0.1
10
1
25°C
60
0
vs. I
V
Figure 61. Input Voltage vs. Output Current
O
= 0.2 V
C
f = 1 Mhz
T
40
A
80
10
= 25°C
http://onsemi.com
I
C,
25°C
COLLECTOR CURRENT (mA)
75°C
50
100
15
20
1000
0.01
100
100
0.1
10
10
1
1
T
1
0
A
30
= −25°C
Figure 60. Output Current vs. Input Voltage
T
75°C
A
= −25°C
T
1
75°C
I
A
C
Figure 58. DC Current Gain
40
V
, COLLECTOR CURRENT (mA)
= −25°C
25°C
in,
INPUT VOLTAGE (VOLTS)
2
50
10
3
25°C
V
4
CE
V
O
= 10 V
= 5 V
100
5