MMUN2238LT1G ON Semiconductor, MMUN2238LT1G Datasheet - Page 6

• Manufacturer Part Number: MMUN2238LT1G
• Description: TRANS BRT NPN 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2238LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.8
0.6
0.2
0.4
10
1
1
0
0
0
I
C
/I
B
V
= 10
R
Figure 14. Output Capacitance
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
20
, COLLECTOR CURRENT (mA)
Figure 12. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G
20
40
CE(sat)
100
0.1
25°C
T
10
A
1
30
= −25°C
0
vs. I
V
Figure 16. Input Voltage vs. Output Current
O
= 0.2 V
C
60
f = 1 MHz
l
T
75°C
E
40
A
10
= 0 A
= 25°C
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
50
80
20
6
0.001
1000
0.01
100
0.1
100
10
10
1
30
T
0
1
A
= −25°C
Figure 15. Output Current vs. Input Voltage
40
75°C
75°C
2
I
75°C
C
Figure 13. DC Current Gain
V
25°C
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
25°C
25°C
4
10
T
T
A
A
= −25°C
= −25°C
6
V
CE
= 10 V
T
V
A
O
8
= 75°C
= 5 V
−25°C
25°C
100
10