MMUN2238LT1G ON Semiconductor, MMUN2238LT1G Datasheet - Page 5

• Manufacturer Part Number: MMUN2238LT1G
• Description: TRANS BRT NPN 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2238LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−
0.001
0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
V
R
= 10
10
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
I
C
20
, COLLECTOR CURRENT (mA)
Figure 7. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G
20
40
CE(sat)
100
0.1
10
1
0
30
V
vs. I
Figure 11. Input Voltage vs. Output Current
O
T
= 0.2 V
A
C
= −25°C
60
10
f = 1 MHz
l
T
E
40
I
A
C
= 0 A
, COLLECTOR CURRENT (mA)
= 25°C
http://onsemi.com
75°C
25°C
20
80
50
5
0.001
1000
0.01
100
100
0.1
10
10
1
30
1
T
0
A
Figure 10. Output Current vs. Input Voltage
= −25°C
V
CE
75°C
= 10 V
2
I
40
C
V
Figure 8. DC Current Gain
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
50
75°C
4
10
25°C
25°C
6
T
A
T
= 75°C
A
= −25°C
V
8
O
−25°C
= 5 V
10
100