BCR 191 E6327 Infineon Technologies, BCR 191 E6327 Datasheet

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BCR 191 E6327

Manufacturer Part Number
BCR 191 E6327
Description
TRANSISTOR PNP DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 191 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
22 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR191E6327XT
SP000010810
PNP Silicon Digital Transistor
BCR191/F
BCR191W
Type
BCR191
BCR191F
BCR191W
1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR191, T
BCR191F, T
BCR191W, T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
Switching circuit, inverter, interface circuit,
Built in bias resistor (R
Pb-free (RoHS compliant) package
Qualified according AEC Q101
driver circuit
B
1
R
1
R
2
C
3
2
E
EHA07183
S
S
S
102°C
128°C
124°C
1
= 22 k
Marking
WOs
WOs
WOs
, R
1)
2
1=B
1=B
1=B
= 22 k
2=E
2=E
2=E
1
)
Pin Configuration
Symbol
V
V
V
V
I
P
T
T
C
3=C
3=C
3=C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
-
-
-
-
-
-
-65 ... 150
Value
200
250
250
100
150
50
50
60
10
-
-
-
BCR191...
Package
SOT23
TSFP-3
SOT323
2007-07-31
Unit
V
mA
mW
°C

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BCR 191 E6327 Summary of contents

Page 1

PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor ( Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR191/F BCR191W ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point BCR191 BCR191F BCR191W Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ ...

Page 3

DC current gain (common emitter configuration -40 °C 10 -25 °C 25 °C 85 °C 125 ° Input on Voltage ...

Page 4

Total power dissipation P BCR191 300 mW 250 225 200 175 150 125 100 Total power dissipation P BCR191W 300 mW 250 225 200 175 150 125 100 75 50 ...

Page 5

Permissible Pulse Load R BCR191 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR191F ...

Page 6

Permissible Puls Load R thJS BCR191W 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Pulse ...

Page 7

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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