BCR 191 E6327 Infineon Technologies, BCR 191 E6327 Datasheet - Page 9

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BCR 191 E6327

Manufacturer Part Number
BCR 191 E6327
Description
TRANSISTOR PNP DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 191 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
22 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR191E6327XT
SP000010810
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Package TSFP-3
1.2
0.2
1.35
1
4
Pin 1
±0.05
±0.05
0.4
3
0.4
±0.05
0.3
2
0.2
0.4
±0.05
±0.05
0.4
9
0.4
0.7
0.55
Manufacturer
BCR847BF
Type code
0.2
0.15
±0.04
±0.05
BCR191...
2007-07-31

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