BCR 191 E6327 Infineon Technologies, BCR 191 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCR 191 E6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 191 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR191E6327XT; SP000010810

Permissible Puls Load R
BCR191W
K/W
10
10
10
10
10
-1
3
2
1
0
10
-6
10
-5
10
-4
10
-3
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
=
-2
(t
p
s
)
t
p
10
0
6
Permissible Pulse Load
P
BCR191W
totmax
10
10
10
10
-
3
2
1
0
10
/P
-6
totDC
10
-5
=
10
(t
p
-4
)
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
BCR191...
-2
2007-07-31
s
t
p
10
0