BFT92WT/R NXP Semiconductors, BFT92WT/R Datasheet - Page 2

• Manufacturer Part Number: BFT92WT/R
• Description: Trans GP BJT PNP 15V 0.025A 3-Pin SC-70 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFT92WT/R

• Package: 3SC-70
• Supplier Package: SC-70
• Pin Count: 3
• Minimum Dc Current Gain: 20@15mA@10V
• Maximum Operating Frequency: 4000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
FEATURES
 High power gain
 Gold metallization ensures
 SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
May 1994
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
excellent reliability
j
CBO
CEO
tot
PNP 4 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
1
2
3
open base
up to T
open emitter
I
I
I
f = 500 MHz
f = 500 MHz; T
I
f = 500 MHz
C
C
C
C
C
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
base
emitter
collector
s
= 93 C; note 1
CB
CONDITIONS
DESCRIPTION
= 10 V; f = 1 MHz
2
CE
CE
CE
CE
amb
= 10 V;
= 10 V
= 10 V;
= 10 V;
= 25 C




20





MIN.
handbook, 2 columns
Marking code: W1.




50
0.5
4
17
2.5

Top view
TYP.
Fig.1 SOT323.
Product specification
1
20
15
35
300





150
MAX.
3
BFT92W
MBC870
2
V
V
mA
mW
pF
GHz
dB
dB
C
UNIT