TPDV840RG STMicroelectronics, TPDV840RG Datasheet - Page 2

• Manufacturer Part Number: TPDV840RG
• Description: ALTERNISTOR 800V 40A TOP3
• Manufacturer: STMicroelectronics

Specifications of TPDV840RG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 200mA
• Current - Non Rep. Surge 50, 60hz (itsm): 350A, 370A
• Current - On State (it (rms)) (max): 40A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Package / Case: TOP-3
• Current - On State (it (rms) (max): 40A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4442-5

TPDV640 ---> TPDV1240
ELECTRICAL CHARACTERISTICS
* For either polarity of electrode A
2/5
THERMAL RESISTANCES
GATE CHARACTERISTICS (maximum values)
P
Rth (j-c) DC
Rth (j-c) AC
G(AV)
Symbol
(dI/dt)c*
dV/dt *
Symbol
Rth (j-a)
V
I
I
V
V
DRM
RRM
I
I
tgt
GT
I
TM
H
GT
GD
L
*
*
= 1W P
V
V
V
V
dI
I
I
I
V
V
Linear slope up to
V
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
G
T
TM
D
D
D
D
DRM
RRM
D
G
= 500mA Gate open
= 1.2I
Contact to ambient
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
= 12V (DC) R
/dt = 3A/µs
= 12V (DC) R
= V
= V
= 67% V
= 60A
GM
rated
rated
DRM
DRM
GT
= 40W (tp = 20µs)
DRM
I
G
tp = 380µs
= 500mA
gate open
R
L
L
L
Test conditions
= 33
= 3.3k
= 33
2
voltage with reference to electrode A
I
GM
Parameter
= 8A (tp = 20µs) V
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj =125°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Quadrant
GM
I - II - III
I - II - III
I - II - III
I - II - III
I - III
II
= 16V (tp = 20µs)
1
.
MAX.
MAX.
MAX.
MAX.
MAX.
TYP.
TYP.
TYP.
MIN.
MIN.
MIN.
Value
Value
1.2
0.9
50
0.02
200
100
200
500
142
1.5
0.2
2.5
1.8
50
35
8
°C/W
°C/W
Unit
C/W
A/ms
Unit
V/ s
mA
mA
mA
mA
µs
V
V
V