T610H-6T STMicroelectronics, T610H-6T Datasheet - Page 3

• Manufacturer Part Number: T610H-6T
• Description: HIGH TEMP 6A SENSITIVE TRIACS
• Manufacturer: STMicroelectronics

Specifications of T610H-6T

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 60A, 63A
• Current - On State (it (rms)) (max): 6A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 6A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 6 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9014-5

T610H
Table 4.
1. for both polarities of A2 referenced to A1.
Table 5.
Figure 1.
Figure 3.
Symbol
V
V
R
7
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
I
DRM
RRM
t0
Symbol
0
T
d
R
R
0
(1)
(1)
(1)
th(j-c)
th(j-a)
1
25
Static characteristics
Thermal resistance
Maximum power dissipation versus
on-state rms current (full cycle)
On-state rms current versus
ambient temperature (free air
convection, full cycle)
I
Threshold voltage
Dynamic resistance
V
V
V
TM
DRM
D
D
/V
/V
= 8.5 A, t
R
R
Junction to case (AC)
Junction to ambient
= V
2
50
= 400 V (at peak mains voltage) T
= 200 V (at peak mains voltage) T
T
RRM
a
(°C)
I
T(RMS)
p
75
3
= 380 µs
(A)
100
4
125
Test conditions
5
Doc ID 15713 Rev 1
Parameter
150
6
T
T
T
T
T
j
j
j
j
j
j
j
= 25 °C
= 150 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
Figure 2.
Figure 4.
1.E+00
7
6
5
4
3
2
1
0
1.E-01
1.E-02
1.E-03
0
1.E-03
25
On-state rms current versus case
temperature (full cycle)
Relative variation of thermal
impedance, versus pulse duration
1.E-02
Zth(j-c)
50
1.E-01
Zth(j-a)
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
T
C
(°C)
tp(s)
1.E+00
75
Value
1.E+01
100
1.8
60
Value
1.5
0.8
2.7
2.2
1.8
Characteristics
62
5
1.E+02
125
°C/W
Unit
1.E+03
Unit
150
mΩ
mA
µA
V
V
3/9