T610H-6T STMicroelectronics, T610H-6T Datasheet - Page 4

• Manufacturer Part Number: T610H-6T
• Description: HIGH TEMP 6A SENSITIVE TRIACS
• Manufacturer: STMicroelectronics

Specifications of T610H-6T

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 60A, 63A
• Current - On State (it (rms)) (max): 6A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 6A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 6 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9014-5

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
65
60
55
50
45
40
35
30
25
20
15
10
100
2.5
2.0
1.5
1.0
0.5
0.0
5
0
10
1
-50
1
0
T
Repetitive
V GT Q1 - Q2 -Q3
C
V
R
=138 °C
to
d
T
j
= 62 mΩ
= 0.80 V
max :
-25
T j =150 °C
Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
I GT Q3
Surge peak on-state current
versus number of cycles
On-state characteristics
(maximum values)
1
I GT Q1-Q2
0
10
T j =25 °C
T
Non repetitive
j
25
initial=25 °C
Number of cycles
2
T
j
(°C)
50
V
TM
(V)
3
75
100
100
t=20ms
One cycle
4
125
Doc ID 15713 Rev 1
1000
150
5
Figure 6.
Figure 8.
Figure 10. Relative variation of critical rate of
11
10
1000
2.0
1.5
1.0
0.5
0.0
9
8
7
6
5
4
3
2
1
0
100
25
10
-50
1
0.01
Sinusoidal pulse width t p < 10 ms
-25
Relative variation of holding and
latching current versus junction
temperature (typical values)
Non-repetitive surge peak on-state
current and corresponding value
of I
decrease of main current versus
junction temperature
50
2
0
t
0.10
25
dI/dt limitation: 50 A/µs
75
T
T
j
(°C)
j
(°C)
50
100
75
1.00
100
125
T
I²t
j
initial=25 °C
t
P
I
(ms)
125
TSM
I H
I L
10.00
T610H
150
150