BT131-800E,412 NXP Semiconductors, BT131-800E,412 Datasheet - Page 2

• Manufacturer Part Number: BT131-800E,412
• Description: TRIAC LOGIC 800V 1A 10MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT131-800E,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 12.5A, 13.7A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1773; 934058139412; BT131-800E

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT131_SER_D_E_2
Product data sheet
Type number
BT131-600D
BT131-600E
BT131-800D
BT131-800E
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/ s.
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
Ordering information
Limiting values
2
t for fusing
BT131-600D, BT131-600E
BT131-800D, BT131-800E
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Conditions
all conduction angles;
T
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
lead
G
t = 20 ms
t = 16.7 ms
T2+ G+
T2+ G
T2 G
T2 G+
Rev. 02 — 17 November 2005
/dt = 200 mA/ s
= 1.5 A; I
= 51.2 C; see
Figure 2
G
= 200 mA;
j
= 25 C prior to
Figure
and
3
1,
BT131 series D and E
4
and
5
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
Max
600
800
1
12.5
13.7
0.78
50
50
50
10
2
5
0.1
+150
125
Triacs logic level
Version
SOT54
Unit
V
V
A
A
A
A
A/ s
A/ s
A/ s
A/ s
A
W
W
C
C
2
s
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