BT131-800E,412 NXP Semiconductors, BT131-800E,412 Datasheet - Page 6

• Manufacturer Part Number: BT131-800E,412
• Description: TRIAC LOGIC 800V 1A 10MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT131-800E,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 12.5A, 13.7A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1773; 934058139412; BT131-800E

Philips Semiconductors
6. Characteristics
Table 5:
T
BT131_SER_D_E_2
Product data sheet
Symbol Parameter
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise stated.
com
D
/dt
/dt rate of change of
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
commutating voltage
rate of rise of off-state
voltage
gate-controlled
turn-on time
Characteristics
Conditions
V
see
V
Figure 10
V
Figure 11
I
I
V
V
dI
V
T
waveform; R
see
I
I
T
T
TM
G
j
D
D
D
D
DM
DM
com
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
V
V
= 1.4 A; see
= 100 mA; see
= 125 C; exponential
= 100 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
= 1.5 A; V
D
D
Figure 8
Figure 12
= 400 V; T
= 67 % of V
/dt = 0.5 A/ms
= 12 V; T
= 400 V; T
DRM(max)
T
GT
GT
GK
= 100 mA;
D
Rev. 02 — 17 November 2005
= 100 mA; see
= 100 mA; see
j
Figure 9
; T
j
G
= 1 k ;
= V
= 25 C
j
= 125 C;
DRM(max)
/dt = 5 A/ s
= 125 C
Figure 7
j
= 125 C
DRM(max)
;
;
-
-
-
-
-
-
-
-
-
-
3
20
-
-
-
0.2
Min
BT131 series D and E
BT131-600D
BT131-800D
-
-
-
-
-
-
-
-
1.3
1.2
0.7
0.3
0.1
-
-
2
Typ
5
5
5
7
10
20
10
10
10
1.5
1.5
-
0.5
-
-
-
Max
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
-
-
-
-
-
-
-
-
-
-
-
0.2
-
5
50
-
Min
BT131-600E
BT131-800E
-
-
-
-
-
-
-
-
1.3
1.2
0.7
0.3
0.1
-
-
2
Typ
Triacs logic level
10
10
10
10
15
25
15
15
10
1.5
1.5
-
0.5
-
-
-
Max
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/ s
V/ s
6 of 12
s