BT131-800E,412 NXP Semiconductors, BT131-800E,412 Datasheet - Page 4

• Manufacturer Part Number: BT131-800E,412
• Description: TRIAC LOGIC 800V 1A 10MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT131-800E,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 12.5A, 13.7A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1773; 934058139412; BT131-800E

Philips Semiconductors
BT131_SER_D_E_2
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration for sinusoidal currents; maximum
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(1) dI
(2) T2 G+ quadrant
(A)
(A)
10
10
10
3
2
1
0
3
2
10
10
t
values
f = 50 Hz; T
duration, for sinusoidal currents; maximum
values
p
T
5
2
/dt limit
20 ms
lead
10
51.2 C
1
(2)
(
10
1)
1
4
surge duration (s)
003aab042
Rev. 02 — 17 November 2005
10
10
3
Fig 5. RMS on-state current as a function of lead
I
T(RMS)
(1) T
(A)
1.2
0.8
0.4
0
temperature; maximum values
50
lead
BT131 series D and E
= 51.2 C
0
10
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
50
I
T
51.2 C
T
j
= 25 C max
t
p
T
(s)
100
Triacs logic level
T
003aab039
003aab040
lead ( C)
I
TSM
t
10
150
1
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