PIC24F16KA101T-I/SS Microchip Technology, PIC24F16KA101T-I/SS Datasheet - Page 14
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PIC24F16KA101T-I/SS
Manufacturer Part Number
PIC24F16KA101T-I/SS
Description
16KB Flash, 2KB RAM, 512B EEPROM, 16 MIPS, 16 I/O,16-bit PIC24F Family, NanoWatt
Manufacturer
Microchip Technology
Series
PIC® XLP™ 24Fr
Datasheets
1.MA240017.pdf
(254 pages)
2.PIC24F04KA201-ISS.pdf
(48 pages)
3.PIC24F16KA101-ISS.pdf
(18 pages)
Specifications of PIC24F16KA101T-I/SS
Core Processor
PIC
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
16KB (5.5K x 24)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 9x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MA240017 - MODULE PLUG-IN PIC24F16KA102 PIM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC24F16KA101T-I/SS
Manufacturer:
MICROCHIR
Quantity:
20 000
PIC24F16KA102 FAMILY
10. Module: A/D Converter
11. Module: Special Features
12. Module: Power-Saving Features
TABLE 29-25: ADC MODULE SPECIFICATIONS (PARTIAL REPRESENTATION)
DS80473F-page 14
AC CHARACTERISTICS
AD05
AD06
AD07
AD08
Param
No.
In Figure 22-2, the interconnect resistance, R
is shown as having a value of no more than
250W. The proper value for R
250 ohms.
In the FDS Configuration register, the Configu-
ration
(FDS<6,4>), have been renamed: DSBOREN
and DSWDTOSC. This has been done to unify
the naming conventions for all nanoWatt XLP
devices. The changes apply to all occurrences
throughout the device data sheet.
It is anticipated that the former names of these
bits will be supported through the next release of
all Microchip development tools.
The Deep Sleep Wake-up Source register,
DSWSRC (Register 10-2), has been renamed
DSWAKE. This has been done to unify the nam-
ing conventions for all nanoWatt XLP devices.
This change applies to all occurrences through-
out the device data sheet, including the device
memory map.
It is anticipated that the register name,
DSWSRC, will be supported through the next
release of all Microchip development tools.
V
V
V
IV
REFH
REFL
REF
Symbol
REF
bits,
+
(Configuration Bits)
DSLPBOR
Reference Voltage High
Reference Voltage Low
Absolute Reference
Voltage
External V
Characteristic
REF
and
IC
+ Current
is no more than
DSWCKSEL
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
AV
AV
Operating temperature
IC
Reference Inputs
SS
AV
SS
,
Min.
—
—
SS
+ 1.7
– 0.3
Typ
200
1.0
—
—
—
13. Module: Electrical Specifications
14. Module: Electrical Specifications
Parameter, AD08 (current specification for the
external ADC voltage reference), has been
added to the specifications for the A/D module.
Table 29-25
bold).
In Table 29-9 (“DC Characteristics: I/O Pin Input
Specifications”), the maximum value of Parame-
ter D151, the input leakage current (I
V
+1.00 µA. The rest of the parameter is
unchanged.
REF
AV
AV
AV
DD
DD
Max.
+ and V
—
—
-40°C T
DD
+ 0.3
– 1.7
(AC Specifications)
(DC Specifications)
is amended as shown (additions in
REF
Units
mA
µA
A
V
V
V
- pins has been changed to
+85°C for Industrial
2010 Microchip Technology Inc.
V
V
REF
REF
+ = 3.3V; sampling
+ = 3.3V; converting
Conditions
IL
) on the