S29JL032J70TFI420 Spansion Inc., S29JL032J70TFI420 Datasheet - Page 9

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S29JL032J70TFI420

Manufacturer Part Number
S29JL032J70TFI420
Description
IC 3V 32M SIMULTANEOUS READ/WRITE FLASH
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29JL032J70TFI420

Cell Type
NOR
Density
32Mb
Access Time (max)
70ns
Interface Type
Serial
Boot Type
Bottom
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S29JL032J70TFI420
Manufacturer:
SPANSION
Quantity:
1 000
1.
1.1
August 25, 2010 S29JL032J_00_03
Simultaneous Read/Write Operations with Zero Latency
S29JL032J Features
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into separate banks (see
form user-defined bank groups.
During an Erase/Program operation, any of the non-busy banks may be read from. Note that only two banks
can operate simultaneously. The device can improve overall system performance by allowing a host system
to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero
latency. This releases the system from waiting for the completion of program or erase operations.
The S29JL032J can be organized with either a top or bottom boot sector configuration.
The Secured Silicon Region is an extra 256 byte sector capable of being permanently locked by the
customer. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been
locked and is 0 if lockable.
Customers may utilize the Secured Silicon Region as bonus space, reading and writing like any other flash
sector, or may permanently lock their own code there.
The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set
standard. Commands are written to the command register using standard microprocessor write timings.
Reading data out of the device is similar to reading from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status
bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been
completed, the device automatically returns to the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low V
during power transitions. The hardware sector protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is not selected for erasure. True background erase can
thus be achieved. If a read is needed from the Secured Silicon Region area (One Time Program area) after
an erase suspend, then the user must use the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both modes.
D a t a
S h e e t
Table 8.2 on page
( P r e l i m i n a r y )
S29JL032J
18). Sector addresses are fixed, system software can be used to
CC
detector that automatically inhibits write operations
9

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