STM8L151C8T6TR STMicroelectronics, STM8L151C8T6TR Datasheet - Page 92
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STM8L151C8T6TR
Manufacturer Part Number
STM8L151C8T6TR
Description
8 BITS MICROCONTR
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Datasheet
1.STM8L151C8U6.pdf
(126 pages)
Specifications of STM8L151C8T6TR
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
41
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 25x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151C8T6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
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Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Flash memory
Parameter
A
A
A
A
+85 °C
+125 °C
+85 °C
+125 °C
Doc ID 17943 Rev 4
T
T
A
A
+25 °C, V
+25 °C, V
T
T
f
T
SYSCLK
A
A
A
T
T
+105 °C
+125 °C
T
T
+85 °C
RET
RET
Conditions
(7 suffix) or
RET
RET
(6 suffix),
(3 suffix)
+125 °C
+125 °C
+85 °C
+85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
STM8L15xx8, STM8L15xR6
300
30
30
10
Min.
1.65
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Typ.
0.7
6
3
Max.
3.6
(1)
kcycles
years
Unit
mA
ms
ms
V