MT46V16M16P-6T:K Micron Technology Inc, MT46V16M16P-6T:K Datasheet - Page 76
![DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP Tray](/photos/31/34/313420/66pin_tsop_sml.jpg)
MT46V16M16P-6T:K
Manufacturer Part Number
MT46V16M16P-6T:K
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16P-6TK.pdf
(93 pages)
Specifications of MT46V16M16P-6T:K
Density
256 Mb
Maximum Clock Rate
333 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
220mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V16M16P-6T:K
Manufacturer:
PHI
Quantity:
1 212
Part Number:
MT46V16M16P-6T:K
Manufacturer:
MT
Quantity:
20 000
Figure 38:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
NOP
74
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
256Mb: x4, x8, x16 DDR SDRAM
T2n
NOP
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
Operations