RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 23

• Manufacturer Part Number: RD38F2020W0YTQ0
• Manufacturer: Micron Technology Inc

Specifications of RD38F2020W0YTQ0

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Table 12.
Figure 6.
7.3
Table 13.
Notes:
1.
2.
3.
4.
5.
R-UB#, R-LB#
ADDRESSES
Datasheet
R1
R2
R3
R4
R5
R6
R7
R8
R9
W8
W9
#
S-CS1#
R-WE#
S-CS2
R-OE#
DATA
See
A write occurs during the overlap (t
WE# goes low with asserting R-UB# and R-LB# for single byte operation or simultaneously asserting R-UB#R-LB# and
R-LB# for double byte operation. A write ends at the earliest high transition of S-CS1# and R-WE#.
t
t
t
goes high.
WP
AS
WR
Symbol
is measured from the address valid to the beginning of a write.
is measured from S-CS1# low to the end of a write.
is measured from the end of write to the address change. t
Figure 6, “AC Waveform SRAM Write Operations”
t
t
t
t
t
t
t
OLZ
t
OHZ
t
RC
CO
OE
t
AA
BA
HZ
t
LZ
WR
BW
AC Waveform SRAM Write Operations
PSRAM AC Characteristics
PSRAM AC Characteristics — Read Operations
SRAM AC Characteristics — Write Operations
Standby
Read Cycle Time
Address to Output Delay
P-CS# to Output Delay
R-OE# to Output Delay
R-UB#, R-LB# to Output Delay
P-CS# to Output in Low-Z
R-OE# to Output in Low-Z
P-CS# to Output in High-Z
R-OE# to Output in High-Z
Write Recovery
R-UB#, R-LB# Setup to R-WE# (S-CS1#) High
Intel® Wireless Flash Memory (W18/W30 SCSP)
W2
Parameter
Order Number: 251407, Revision: 009
WP
) of low S-CS1# and low R-WE#. A write begins when S-CS1# goes low and R-
6
.
Address Stabl e
W5
Intel® Wireless Flash Memory (W18/W30 SCSP)
W6
W1
W1
Min
WR
88
10
W9
W9
–
–
–
–
5
–
–
W3
W3
applied in case a write ends as S-CS1# or R-WE#
1.8 V
4,000
Max
W4
88
25
25
88
88
65
–
–
Data In
60
Min
0
85
10
–
–
–
–
0
0
0
3.0 V
4,000
Max
85
85
40
85
25
25
–
–
–
–
W8
W7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
June 2005
1,2,3,4
Notes
1,3,4
1,2,4
1,4
1
1
1
1
1
1,5
1
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