MT28C64432W18AFW-F705P70 TWT Micron Technology Inc, MT28C64432W18AFW-F705P70 TWT Datasheet - Page 9

• Manufacturer Part Number: MT28C64432W18AFW-F705P70 TWT
• Manufacturer: Micron Technology Inc

Specifications of MT28C64432W18AFW-F705P70 TWT

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

MultiChip Packaging Considerations
lenges when controlling complex memory devices.
W30A, and MT28C644644W18/W30A devices com-
bine one Micron Flash device with a single Cellular-
RAM device.
Unique IDs, State Machines, and
Registers
(CSM) and status register (SR) and read configuration
register (RCR). The Flash device has its own OTP , CFI,
and device code. Depending on the boot configura-
tion of the device, the OTP, CFI, and device code infor-
mation may differ.
Table 2:
NOTE:
09005aef80c9c807
MT28C64432W18A.fm - Rev. F Pub 2/04 EN
1. WAIT status is only valid for burst mode operation. WAIT should be ignored for all other operating modes.
2. Not used in asynchronous/page non-latched operation. For latched operation, please refer to the Flash discrete data
3. Not used in asynchronous/page operation.
Multichip packaging presents unique chal-
The MT28C64416W18/W30A, MT28C64432W18/
The Flash device has a command state machine
sheet.
Read
Write
Standby
Output
Disable
Reset
Read
Write
Standby
Output
Disable
Deep
Sleep
Mode
MODES
F_CE# F_OE# F_WE# F_RST# F_ADV#
H
X
L
L
L
Truth Table
H
H
X
X
L
Flash any mode allowable
Flash must be in High-Z
H
X
H
X
L
FLASH SIGNALS
64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
H
H
H
H
L
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
X
X
X
X
L
2
F_WAIT#
Asserted
Active
Active
High-Z
High-Z
9
1
1
3
(CR) that defines how the device performs self refresh.
WAIT Ball Operation
ured by programming bit 10 in the read configuration
register (RCR). The default setting for the WAIT ball is
active LOW.
Power Consumption
calculations consider the active operation of the
Flash as well as that of the CellularRAM. Total
power consumed will be the sum of the currents
associated with the state of each device.
C_CE#
CellularRAM memory must be in High-Z
H
H
The CellularRAM device has a configuration register
The WAIT ball polarity for the Flash device is config-
Multiple chip packaging requires that power
L
L
L
CellularRAM memory any mode
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C_ZZ# C_OE# C_UB/LB#
CellularRAM SIGNALS
H
H
H
H
L
allowable
H
H
X
X
L
X
X
X
L
L
©2003 Micron Technology. Inc. All rights reserved.
C_WE#
H
H
X
X
L
MEMORY
CONTROL
Cellular
Cellular
Other
Other
Other
Other
Other
None
Flash
Flash
RAM
RAM
BUS
MEMORY
OUTPUT
High-
High-
High-
High-
High-
High-
DQ0–
DQ15
D
D
D
D
OUT
OUT
Z
Z
Z
Z
Z
Z
IN
IN