MT46H64M16LFCK-6 IT:A Micron Technology Inc, MT46H64M16LFCK-6 IT:A Datasheet - Page 61

• Manufacturer Part Number: MT46H64M16LFCK-6 IT:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-6 IT:A

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 25: Random Read Accesses
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
n
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
61
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
x
t
DQSQ.
D
n + 1
Don’t Care
T3n
T3n
D
x + 1
OUT
OUT
D
OUT
D
T4
T4
NOP
NOP
x
OUT
b
D
x + 1
T4n
T4n
OUT
D
b + 1
OUT
© 2007 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
D
OUT
b
OUT
g
T5n
T5n
D
b + 1
D
g + 1
OUT
OUT