MT46H32M32LFCM-75:A Micron Technology Inc, MT46H32M32LFCM-75:A Datasheet - Page 59

• Manufacturer Part Number: MT46H32M32LFCM-75:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-75:A

• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 23: Consecutive READ Bursts
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
t
READ
Bank,
n
READ
Bank,
OUT
Col b
Col b
AC,
T2
1
T2
59
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
n + 2
OUT
n
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NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
n + 1
T3n
D
n + 3
T3n
OUT
OUT
D
n + 2
OUT
D
T4
NOP
T4
NOP
OUT
b
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
Transitioning Data
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READ Operation
D
T5
NOP
T5
NOP
D
b + 2
OUT
b
OUT
T5n
T5n
D
b + 1
D
b + 3
OUT
OUT