MT47H64M16HR-3:G Micron Technology Inc, MT47H64M16HR-3:G Datasheet - Page 99
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MT47H64M16HR-3:G
Manufacturer Part Number
MT47H64M16HR-3:G
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H64M16HR-3G.pdf
(134 pages)
Specifications of MT47H64M16HR-3:G
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
220mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
MT47H64M16HR-3:G
Manufacturer:
MICRON
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MT47H64M16HR-3:G
Manufacturer:
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Part Number:
MT47H64M16HR-3:G TR
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Micron Technology Inc
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READ with Auto Precharge
Table 42: READ Using Concurrent Auto Precharge
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
From Command (Bank n)
READ with auto precharge
If A10 is high when a READ command is issued, the READ with auto precharge function
is engaged. The DDR2 SDRAM starts an auto precharge operation on the rising clock
edge that is AL + (BL/2) cycles later than the read with auto precharge command provi-
ded
edge, the start point of the auto precharge operation will be delayed until
satisfied. If
auto precharge operation will be delayed until
nal precharge is pushed out by
charge happens (not at the next rising clock edge after this event).
When BL = 4, the minimum time from READ with auto precharge to the next ACTIVATE
command is AL + (
auto precharge to the next ACTIVATE command is AL + 2 clocks + (
term (
tion can also be used: AL + BL/2 - 2CK + (
precharge does not start earlier than two clocks after the last 4-bit prefetch.
READ with auto precharge command may be applied to one bank while another bank is
operational. This is referred to as concurrent auto precharge operation, as noted in Ta-
ble 42. Examples of READ with precharge and READ with auto precharge with applica-
ble timing requirements are shown in Figure 52 (page 100) and Figure 53 (page 101),
respectively.
t
WRITE or WRITE with auto precharge
RAS (MIN) and
READ or READ with auto precharge
t
RTP +
PRECHARGE or ACTIVATE
To Command (Bank m)
t
RTP (MIN) is not satisfied at this rising clock edge, the start point of the
t
RP)/
t
t
CK is always rounded up to the next integer. A general purpose equa-
RTP +
t
RTP are satisfied. If
t
RP)/
99
t
t
CK. When BL = 8, the minimum time from READ with
RTP,
t
RP starts at the point where the internal pre-
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
RAS (MIN) is not satisfied at this rising clock
RTP +
(with Concurrent Auto Precharge)
1Gb: x4, x8, x16 DDR2 SDRAM
t
RTP (MIN) is satisfied. When the inter-
t
RP)/
Minimum Delay
t
CK. In any event, the internal
(BL/2) + 2
BL/2
1
© 2004 Micron Technology, Inc. All rights reserved.
t
RTP +
t
t
RAS (MIN) is
RP)/
t
CK. The
READ
Units
t
t
t
CK
CK
CK