MT41J64M16LA-15E:B Micron Technology Inc, MT41J64M16LA-15E:B Datasheet - Page 190
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MT41J64M16LA-15E:B
Manufacturer Part Number
MT41J64M16LA-15E:B
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J64M16LA-15EB.pdf
(208 pages)
Specifications of MT41J64M16LA-15E:B
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Price
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MT41J64M16LA-15E:B
Manufacturer:
MICRON
Quantity:
4 300
Company:
Part Number:
MT41J64M16LA-15E:B
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT41J64M16LA-15E:B
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J64M16LA-15E:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Table 83: Mode Registers for R
Table 84: Mode Registers for R
Table 85: Timing Diagrams for Dynamic ODT
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Figure and Page
Figure 110 (page 191)
Figure 111 (page 191)
Figure 112 (page 192)
Figure 113 (page 193)
Figure 114 (page 193)
M9
0
0
0
0
1
1
1
1
M10
0
0
1
1
MR2 (R
MR1 (R
TT(WR)
M6
0
0
1
1
0
0
1
1
TT,nom
Note:
)
M9
0
1
0
1
)
1. RZQ = 240Ω. If R
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
M2
0
1
0
1
0
1
0
1
TT,nom
TT(WR)
R
TT,nom
Reserved
Reserved
RZQ/12
RZQ/4
RZQ/2
RZQ/6
RZQ/8
TT,nom
R
Off
TT(WR)
Reserved
(RZQ)
RZQ/4
RZQ/2
Dynamic ODT off: WRITE does not affect R
is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
(RZQ)
190
R
TT,nom
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Reserved
Reserved
120
Off
60
40
20
30
(Ohms)
1Gb: x4, x8, x16 DDR3 SDRAM
R
TT,nom
R
© 2006 Micron Technology, Inc. All rights reserved.
TT(WR)
Self refresh, write
Reserved
TT,nom
Self refresh
120
Mode Restriction
60
(Ohms)
Dynamic ODT
n/a
n/a
n/a
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