MT49H64M9CHT-25:A Micron Technology Inc, MT49H64M9CHT-25:A Datasheet - Page 61
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MT49H64M9CHT-25:A
Manufacturer Part Number
MT49H64M9CHT-25:A
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet
1.MT49H64M9CHT-25A.pdf
(74 pages)
Specifications of MT49H64M9CHT-25:A
Organization
64Mx9
Address Bus
25b
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
675mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 38:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
576Mb_RLDRAM_II_SIO_Core2.fm - Rev. F 6/09 EN
COMMAND
ADDRESS
BANK
DK#
CK#
DM
DK
CK
D
WRITE
Bank a
Consecutive WRITE Bursts with Multiplexed Addressing
T0
Ax
Notes:
NOP
T1
Ay
t
RC = 4
1. Data from the second WRITE command to bank a will appear on subsequent clock cycles
2. DI a = data-in for bank a; DI b = data-in for bank b.
3. Three subsequent elements of the burst are applied following DI for each bank.
4. Each WRITE command may be to any bank; if the second WRITE is to the same bank,
that are not shown.
must be met.
Bank b
WRITE
T2
Ax
WL = 6
576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II
T3
NOP
Ay
Bank a 1
WRITE
T4
Ax
61
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
Ay
T6
DI
NOP
a
T6n
TRANSITIONING DATA
T7
NOP
©2004 Micron Technology, Inc. All rights reserved.
T7n
T8
DI
NOP
b
Operations
T8n
DON’T CARE
T9
NOP
t
RC
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