MT47H256M4HQ-3E:G Micron Technology Inc, MT47H256M4HQ-3E:G Datasheet - Page 38

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MT47H256M4HQ-3E:G

Manufacturer Part Number
MT47H256M4HQ-3E:G
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H256M4HQ-3E:G

Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Table 12: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
Internal READ-to-
PRECHARGE delay
CAS#-to-CAS#
delay
Write recovery time
Write AP recovery
+ precharge time
Internal WRITE-to-
READ delay
LOAD MODE cycle
time
REFRESH-
to-
ACTIVATE
or to
-REFRESH
interval
Average periodic
refresh
(commercial)
Average periodic
refresh
(industrial)
Average periodic
refresh
(automotive)
CKE LOW to CK,
CK# uncertainty
= +1.8V ±0.1V, V
Parameter
AC Characteristics
256Mb
512Mb
1Gb
2Gb
DD
Symbol
t
t
= +1.8V ±0.1V
t
DELAY
t
REFI
t
t
t
t
REFI
t
t
MRD
t
WTR
CCD
DAL
REFI
RTP
RFC
WR
AT
IT
t
127.5
197.5
WR +
Min
105
7.5
t
7.5
15
75
RP
2
2
-187E
Max
7.8
3.9
3.9
t
127.5
197.5
WR +
Min
105
7.5
t
7.5
15
75
RP
2
2
-25E
Max
7.8
3.9
3.9
t
127.5
197.5
WR +
Min
105
t
7.5
7.5
15
75
RP
2
2
-25
MIN limit =
Max
7.8
3.9
3.9
MAX limit = n/a
t
127.5
197.5
WR +
Min
105
7.5
t
7.5
15
75
RP
2
2
-3E
t
IS +
Max
7.8
3.9
3.9
t
CK +
t
127.5
197.5
WR +
Min
105
t
t
7.5
7.5
15
75
IH
RP
2
2
-3
Max
7.8
3.9
3.9
t
127.5
197.5
WR +
Min
105
t
7.5
7.5
15
75
RP
2
2
-37E
Max
7.8
3.9
3.9
t
127.5
197.5
WR +
Min
105
7.5
t
15
10
75
RP
2
2
-5E
Max
7.8
3.9
3.9
Units Notes
t
t
ns
CK
ns
ns
ns
CK
ns
µs
µs
µs
ns
18, 37,
18, 37
18, 37
18, 41
18, 41
18, 41
18, 41
39
18
40
18
42

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