MT48LC16M4A2TG-7E IT:G Micron Technology Inc, MT48LC16M4A2TG-7E IT:G Datasheet - Page 37
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT48LC16M4A2TG-7E IT:G
Manufacturer Part Number
MT48LC16M4A2TG-7E IT:G
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC16M4A2TG-7E_ITG.pdf
(72 pages)
Specifications of MT48LC16M4A2TG-7E IT:G
Lead Free Status / RoHS Status
Not Compliant
- Current page: 37 of 72
- Download datasheet (4Mb)
READ with Auto Precharge
WRITE with Auto Precharge
Figure 29:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
READ With Auto Precharge Interrupted by a READ
Note:
• Interrupted by a READ (with or without auto precharge): A READ to bank m will inter-
• Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will
• Interrupted by a READ (with or without auto precharge): A READ to bank m will inter-
• Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will
Internal
States
rupt a READ on bank n, CL later. The precharge to bank n will begin when the READ
to bank m is registered (Figure 29 on page 37).
interrupt a READ on bank n when registered. DQM should be used two clocks prior to
the WRITE command to prevent bus contention. The precharge to bank n will begin
when the WRITE to bank m is registered (Figure 30 on page 38).
rupt a WRITE on bank n when registered, with the data-out appearing CL later. The
precharge to bank n will begin after
bank m is registered. The last valid WRITE to bank n will be data-in registered one
clock prior to the READ to bank m (Figure 31 on page 38).
interrupt a WRITE on bank n when registered. The precharge to bank n will begin
after
valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank
m (Figure 32 on page 39).
DQM is LOW.
t
WR is met, where
COMMAND
ADDRESS
BANK m
BANK n
CLK
DQ
Page Active
T0
NOP
t
WR begins when the WRITE to bank m is registered. The last
READ - AP
BANK n,
Page Active
BANK n
COL a
T1
37
READ with Burst of 4
CAS Latency = 3 (BANK n)
T2
NOP
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WR is met, where
BANK m,
READ - AP
T3
BANK m
COL d
Interrupt Burst, Precharge
CAS Latency = 3 (BANK m)
READ with Burst of 4
TRANSITIONING DATA
T4
NOP
D
64Mb: x4, x8, x16 SDRAM
a
OUT
t
RP - BANK n
t
WR begins when the READ to
T5
NOP
©2000 Micron Technology, Inc. All rights reserved.
D
a + 1
OUT
T6
NOP
D
OUT
d
Commands
DON’T CARE
Idle
T7
NOP
t RP - BANK m
Precharge
D
d + 1
OUT
Related parts for MT48LC16M4A2TG-7E IT:G
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT48LC8M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-55:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-5:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 200MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M4A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H8M32LFB5-75:H](/images/manufacturer_photos/0/4/441/micron_technology_inc_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC32M8A2P-7E:D](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT46V64M8P-6T:F](/photos/7/22/72288/mfg557-66-tsop_tmb.jpg)
Part Number:
Description:
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-6:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H16M16LFBF-75:H](/photos/31/34/313423/557-54-vfbga_tmb.jpg)
Part Number:
Description:
SDRAM 256M-BIT 1.8V 54-PIN VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2TG-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48V8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet: