MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 95

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 32:
Table 33:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Description
Input/output capacitance
ALE, CE#, CLE, R/B#, RE#, WE#,
WP#
Input/output capacitance
I/O[7:0]
Parameter
Input pulse levels
Input rise and fall slew rates
Input and output timing levels
Output load: Synchronous interface, nominal output
drive strength
Output load: Asynchronous interface, nominal
output drive strength (VccQ = 1.7
Output load: Asynchronous interface, nominal
output drive strength (VccQ = 2.7
Pad Capacitance: LGA-52 Package
Test Conditions
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100 percent tested.
2. SDP = Single die package.
1. Transmission line delay is assumed to be very small.
2. This test setup applies to all package configurations.
Test conditions: T
–
–
Cin/Cout
Cin/Cout
Symbol
1.95V)
3.6V)
Micron Confidential and Proprietary
c
8Gb Asychronous/Synchronous NAND Flash Memory
= 25°C; f = 1 MHz; V
Device
SDP
SDP
95
2
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
= 0V.
0V to V
C
C
C
V
L
L
Value
L
1V/ns
CC
= 30pF
= 50pF
= 5pF
Q/2
Max
10
CC
5
Q
Electrical Characteristics
©2008 Micron Technology, Inc. All rights reserved.
Unit
pF
pF
Notes
Notes
1, 2
Advance
2
2
–
–
–
1
1