NP8P128A13TSM60E Micron Technology Inc, NP8P128A13TSM60E Datasheet - Page 71

• Manufacturer Part Number: NP8P128A13TSM60E
• Manufacturer: Micron Technology Inc

Specifications of NP8P128A13TSM60E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Numonyx® Omneo™ P8P Datasheet
17.0
Table 32: Program and Erase Specification
Notes:
1.
2.
3.
4.
5.
August 2010
316144-07
Erasing and Suspending
Erase to Suspend
Erase Time
Suspend Latency
Conventional Word Programming
Buffered Programming
Program Time
Program Time
Operation
Typical values measured at T
Performance numbers are valid for all speed versions. Sampled, but not 100% tested.
Averaged over entire device.
W602 is the minimum time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures in flash
devices. This specification is required if the designer wishes to maintain compatibility with the P33 NOR flash device.
However, it is not required with PCM.
These performance numbers are valid for all speed versions.
Sampled, not 100% tested.
(1)
(6)
Program and Erase Characteristics
W602
W500
W501
W600
W601
W200
Symbol
W200
W250
3
A
= +25 °C, typical voltages and 50% data pattern per word. Excludes system overhead.
t
t
t
t
t
t
t
t
ERS/SUSP
ERS/PB
ERS/MB
SUSP/P
SUSP/E
PROG/W
PROG/W
PROG/PB
Parameter
Erase or Erase-Resume
command to Erase-suspend
command
16-KW Parameter
64-KW Main
Write suspend
Erase suspend
Single word
Single word
(Legacy Program & Bit-
alterable Write)
One Buffer (64 Bytes/32
words)
(Legacy Program & Bit-
alterable Write)
One Buffer (64 Bytes/32
words)
(Program on all 1s)
Description
Min
4,5
5
V
PPL
Typ
500
100
400
120
120
35
35
60
71
(4,5)
Max
200
800
120
240
360
280
60
60
Unit
ms
µs
µs
µs
µs
µs
71