SAA4956TJ/V2,512 NXP Semiconductors, SAA4956TJ/V2,512 Datasheet - Page 17

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SAA4956TJ/V2,512

Manufacturer Part Number
SAA4956TJ/V2,512
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of SAA4956TJ/V2,512

Operating Temperature (max)
70C
Operating Temperature (min)
0C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
10 CHARACTERISTICS
V
1998 Dec 08
Supply
V
V
V
I
I
I
I
I
Inputs except I
V
V
I
C
Inputs of I
V
V
I
C
Outputs except I
V
V
I
C
Output of I
V
I
C
Write cycle timing; note 3
T
t
t
DD(tot)
DD
DD(std)
DD(O)
DD(P)
LI
LI
LO
LO
W(SWCKH)
W(SWCKL)
DD
SYMBOL
cy(SWCK)
DD
DD(O)
DD(P)
IH
IL
IH
IL
OH
OL
OL
i
i
o
o
2.9-Mbit field memory with noise reduction
= V
DD(O)
2
2
C-bus signals: SCL (pin 1) and SDA (pin 20); note 2
C-bus signal: SDA (pin 20); note 2
= V
supply voltage (pin 19)
supply voltage (pin 22)
supply voltage (pin 21)
total supply current
(I
operating supply current
stand-by supply current
supply current
supply current
HIGH-level input voltage
LOW-level input voltage
input leakage current
input capacitance
HIGH-level input voltage
LOW-level input voltage
input leakage current
input capacitance
HIGH-level output voltage
LOW-level output voltage
output leakage current
output capacitance
LOW-level output voltage
output leakage current
output capacitance
SWCK cycle time
SWCK HIGH pulse width
SWCK LOW pulse width
DD(tot)
2
DD(P)
C-bus signals (pins 3 to 18, 23 to 26 and 40)
2
C-bus signal SCL (pins 27 to 38)
= I
= 3.0 to 3.6 V; T
DD
PARAMETER
+ I
DD(O)
+ I
DD(P)
amb
= 0 to 70 C; 3 ns input transition times; unless otherwise specified.
)
minimum write/read
cycle; outputs
open-circuit
minimum write/read cycle
after 1 RSTW/RSTR
cycle; NREN, WE,
RE and OE = LOW
minimum write/read
cycle; outputs
open-circuit
V
f = 1 MHz; V
V
f = 1 MHz; V
I
I
f = 1 MHz; V
I
f = 1 MHz; V
NREN = LOW; see Fig.4
NREN = HIGH; see Fig.4
see Fig.4
see Fig.4
OH
OL
OL
i
i
= 0 V to V
= 0 V to V
= 4.2 mA
= 4 mA
= 5 mA
CONDITIONS
17
DD(P)
i
DD(P)
i
o
o
= 0 V
= 0 V
= 0 V
= 0 V
3.0
3.0
3.0
2.0
3.0
2.4
26
52
7
7
MIN.
0.5
10
0.5
10
10
10
3.3
3.3
3.3
27
25
3
2
0
TYP.
(1)
Preliminary specification
3.6
3.6
5.5
70
60
10
10
1
V
+0.8
+10
7
V
+1.5
+10
10
0.4
+10
10
0.4
+10
10
150
SAA4956TJ
DD(P)
DD(P)
MAX.
+ 0.3 V
+ 0.5 V
V
V
V
mA
mA
mA
mA
mA
V
pF
V
pF
V
V
pF
V
pF
ns
ns
ns
ns
UNIT
A
A
A
A

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