M395T5750EZ4CE65 Samsung Semiconductor, M395T5750EZ4CE65 Datasheet - Page 11

• Manufacturer Part Number: M395T5750EZ4CE65
• Manufacturer: Samsung Semiconductor

Specifications of M395T5750EZ4CE65

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

2.7 Advanced Memory Buffer Block Diagram
FBDIMM
Figure 11 : Advanced Memory Buffer Block Diagram
Ref Clock
Reset#
SMbus
1x2
Controller
Control
LAI
Reset
Controller
Thermal
SMbus
Sensor
PLL
NORTH
Core Control
and CSRs
CRC Check
Data CRC Gen
Command
Decoder &
& Read FIFO
Northbound
Data Out
Southbound
10x2
mux
failover
Data In
PISO
Data Merge
10*2
14*6*2
failover
demux
14x2
Write
deep
FIFO
Data
36
Advance Memory Buffer
IBIST -TX
Link Init SM
and Control
and CSRs
Sync & ldie
Generator
Re-Time
IBIST - RX
External MEMBIST
Pattern
Block Dlagram
DDR calibration &
DDR IOBIST/DFX
Re-synch
Link lnit SM
and Control
LAI Logic
and CSRs
Re-synch
DRAM Cmd
Re-Time
DDR State
Controller
and CSRs
IBIST - RX
11 of 33
14x2
NB LAI Buffer
demux
Data Merge
10*2
patterns
lnit
IBIST - TX
Northbound
Data In
14*12
Southbound
Data Out
PISO
mux
10x2
Cmd Out
Data Out
Data In
Rev. 1.51 January 2008
72 + 18x2
29
29
DDR2 SDRAM
4
4
DRAM Clock #
DRAM Clock
DRAM Address /
Command Copy 1
DRAM Address /
Command Copy 2
DRAM
Data / strobe