M395T5750EZ4CE65 Samsung Semiconductor, M395T5750EZ4CE65 Datasheet - Page 5

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M395T5750EZ4CE65

Manufacturer Part Number
M395T5750EZ4CE65
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of M395T5750EZ4CE65

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240FBDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
512Mb
Package Type
FBDIMM
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Number Of Elements
36
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
2.0 FBDIMM GENERALS
2.1 FB-DIMM Operation Overview
FB-DIMM (Fully Buffered Dual in Line Memory Module) is designed for the applications which require higher data transfer bandwidth and
scalable memory capacity. The memory slot access rate per channel decreases as the memory bus speed increases, resulting in limited
density build-up as channel speeds increase with memory system having the stub-bus architecture. FB-DIMM solution is intended to
eliminate this stub-bus channel bottleneck by using point-to-point links that enable multiple memory modules to be connected serially to
a given channel.
Memory system architecture perspective, FB-DIMM is fully differentiated from Registered DIMM and Unbuffered DIMM. A lot of new
technologies are integrated into this solution in order to achieve this scalable higher speed memory solution. Serial link interface with
packet data format and dedicated read/write paths are key attribute in FB-DIMM protocol. Point to Point interconnect with fully differential
signaling and de-emphasis scheme are key attribute in FBD channel link. Clock recovery by using data stream is key attribute in FBD
clocking. FB-DIMM supports both clock resync and resampling mode options. CRC (Cyclic Redundancy Check) bits are transferred with
data stream for reliability at high speed data transaction. Failover mechanism supports system running with dynamic IO failure. Finally all
FB-DIMM is connected in daisy chain manner. Thus, every interconnection between AMB (advanced memory buffer) to AMB, AMB to
Host and AMB to DRAM, is point to point interconnection which allows higher data transfer bandwidth.
Figure 1 shows a lot of new technologies integrated with FBD solution.
Figure 1 : FB-DIMM Memory System Overview
FBDIMM
P2P Interconnect
- De-Emphasis
- LVDS
Two unidirectional links
Host
- Southbound
- Northbound
- CRC fail-over
Reliability
Clock
SB (ADDR, CMD, Wdata)
NB(Rdata)
ADDR.CMD, DATA
Protocol Packet
Clock Recovery
Rx
Tx
Clk_Ref
DQs ADDR
5 of 33
DRAM
DRAM
DRAM
DRAM
AMB
CMD
CLK
Rx
Tx
Buffer
FIFO
Rx
Tx
DQs
AMB
ADDR
CMD
CLK
Rev. 1.51 January 2008
Tx
Rx
DDR2 SDRAM
Fly-by CLK, CMD
DIMM Topology
Daisy Chain
Upto 8 AMB
Connection

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