MT8VDDT6464AG-265DB Micron Technology Inc, MT8VDDT6464AG-265DB Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT8VDDT6464AG-265DB
Manufacturer Part Number
MT8VDDT6464AG-265DB
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT8VDDT6464AG-265DB.pdf
(15 pages)
Specifications of MT8VDDT6464AG-265DB
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.16A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant
General Description
Serial Presence-Detect Operation
PDF: 09005aef80867ab3/Source: 09005aef80867a99
DD8C32_64x64A.fm - Rev. J 8/08 EN
The MT8VDDT3264A, and MT8VDDT6464A are high-speed, CMOS, dynamic random
access, 256MB, and 512MB memory modules organized in a x64 configuration. These
modules use DDR SDRAM devices with four internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single 2n-bit-
wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-
bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands are registered at every positive edge of CK. Input data is registered on both
edges of DQS, and output data is referenced to both edges of DQS, as well as to both
edges of CK.
DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various DDR SDRAM organizations and timing parameters. The remaining 128
bytes of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
which provide eight unique DIMM/EEPROM addresses. Write protect (WP) is connected
to V
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0],
SS
, permanently disabling hardware write protect.
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2003 Micron Technology, Inc. All rights reserved.