MT36JSZF51272PY-1G1D1 Micron Technology Inc, MT36JSZF51272PY-1G1D1 Datasheet - Page 4

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MT36JSZF51272PY-1G1D1

Manufacturer Part Number
MT36JSZF51272PY-1G1D1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36JSZF51272PY-1G1D1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
512Mx72
Total Density
4GByte
Chip Density
1Gb
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
3.06A
Number Of Elements
36
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Table 5: Pin Descriptions
PDF: 09005aef830b8963
JSZF36C512x72P.pdf – Rev. B 7/09 EN
RAS#, CAS#,
DQS#[17:0]
CK0, CK0#
DQS[17:0]
ODT[1:0]
DQ[63:0]
Err_Out#
Symbol
CKE[1:0]
A[15:0]
BA[2:0]
RESET#
SA[2:0]
CB[7:0]
S#[1:0]
Par_In
WE#
SDA
SCL
(open drain)
(LVCMOS)
Output
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
Description
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one loca-
tion out of the memory array in the respective bank. A10 is sampled during a
PRECHARGE command to determine whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). If only one bank is to
be precharged, the bank is selected by BA. A12 is also used for BC4/BL8 identification
as “BL on-the-fly” during CAS commands. The address inputs also provide the op-
code during the mode register command set. A[13:0] address the 1Gb DDR3 devices.
A[15:14] are needed to calculate parity on the command/address bus. A15 is needed
to calculate parity on the command/address bus.
Bank address inputs: BA[2:0] define the device bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode regis-
ter (MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command. BA[1:0]
are used as part of the parity calculation.
Clock: CK and CK# are differential clock inputs. All control, command, and address
input signals are sampled on the crossing of the positive edge of CK and the nega-
tive edge of CK#.
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM.
On-die termination: ODT (registered HIGH) enables termination resistance internal
to the DDR3 SDRAM. When enabled, ODT is only applied to the following pins: DQ,
DQS, DQS#, and DM. The ODT input will be ignored if disabled via the LOAD MODE
command.
Parity input: Parity bit for the address, RAS#, CAS#, and WE#.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Reset: An active LOW CMOS input referenced to V
CMOS input defined as a rail-to-rail signal with a DC HIGH ≥ 0.8 × V
0.2 × V
Chip select: S# enables (registered LOW) and disables (registered HIGH) the com-
mand decoder.
Presence-detect address inputs: These pins are used to configure the temperature
sensor/SPD EEPROM address range on the I
Serial clock for presence-detect: SCL is used to synchronize communication to and
from the temperature sensor/SPD EEPROM.
Check bits: Data used for ECC.
Data input/output: Bidirectional data bus.
Data strobe: DQS and DQS# are differential data strobes. Output with read data.
Edge-aligned with read data. Input with write data. Center-aligned with write data.
Serial data: SDA is a bidirectional pin used to transfer addresses and data into and
out of the temperature sensor/SPD EEPROM on the module on the I
Parity error output: Parity error found on the command and address bus.
DD
.
4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
2
C bus.
SS
. The RESET# input receiver is a
©2008 Micron Technology, Inc. All rights reserved.
DD
2
C bus.
and DC LOW ≤

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