TLP3062(S,C.F,T) Toshiba, TLP3062(S,C.F,T) Datasheet - Page 2

• Manufacturer Part Number: TLP3062(S,C.F,T)
• Manufacturer: Toshiba

Specifications of TLP3062(S,C.F,T)

• Number Of Elements: 1
• Forward Voltage: 1.3V
• Repetitive Peak Off-state Volt: 600V
• Operating Temp Range: -25C to 85C
• Output Current: 100mA
• Package Type: PDIP
• Reverse Breakdown Voltage: 5V
• Mounting: Through Hole
• Pin Count: 5
• Trigger Current: 5mA
• Zero Crossing Circuit: Yes
• Operating Temperature Classification: Commercial
• Forward Current: 50mA
• Power Dissipation: 330mW
• Output Device: Triac
• Isolation Voltage: 5000Vrms
• Lead Free Status / RoHS Status: Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
Supply voltage
Forward current
Peak on−state current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
※ In the case of TLP3062
Forward current
Forward current derating (Ta ≥ 53°C)
Peak forward current
(100 μs pulse, 100 pps)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Reverse voltage
Junction temperature
Off−state output terminal voltage
On−state RMS current
On−state current derating (Ta ≥ 25°C)
Peak on−state current
(100μs pulse, 120 pps)
Peak nonrepetitive surge
current (P
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
together.
Characteristic
w
= 10 ms)
Characteristic
(Ta = 25°C)
Ta = 25°C
Ta = 70°C
(Note 1)
Symbol
V
T
I
I
TP
F
opr
AC
*
ΔP
ΔP
ΔP
ΔI
I
ΔI
Symbol
T(RMS)
V
I
T
BV
T
T
F
T
TSM
I
I
P
V
DRM
P
D
D
P
T
I
FP
T
TP
T
stg
opr
sol
F
D
R
D
2
/ °C
/ °C
T
j
j
/ °C
/ °C
/ °C
S
TLP3061(S),TLP3062(S),TLP3063(S)
Min.
−25
15
―
―
−55 to 150
−40 to 100
Typ.
Rating
20
―
―
―
5000
−0.7
−1.0
−1.1
−4.0
−4.4
100
125
600
100
300
115
260
330
1.2
50
50
1
5
2
Max.
240
25
85
1
mW / °C
mW / °C
mW / °C
mA / °C
mA / °C
Vrms
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
A
A
Unit
Vac
mA
°C
A
2010-10-01