BAP55LX T/R NXP Semiconductors, BAP55LX T/R Datasheet - Page 3

BAP55LX T/R

Manufacturer Part Number
BAP55LX T/R
Description
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP55LX T/R

Configuration
Single
Forward Current
100mA
Forward Voltage
1.1V
Power Dissipation
135mW
Operating Temperature Classification
Military
Reverse Voltage
50V
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
UHF/SHF
Lead Free Status / RoHS Status
Compliant
NXP Semiconductors
Table 6.
T
BAP55LX
Product data sheet
Symbol
ISL
L
L
L
L
L
amb
L
ins
ins
ins
ins
S
= 25
C unless otherwise specified.
Characteristics
Parameter
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
…continued
Conditions
see
see
see
see
see
when switched from I
I
I
I
R
R
F
All information provided in this document is subject to legal disclaimers.
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
Figure
Figure
Figure
Figure
Figure
Rev. 2 — 16 December 2010
3; V
4; I
4; I
4; I
4; I
L
= 100 ; measured at
F
F
F
F
R
= 0.5 mA;
= 1 mA;
= 10 mA;
= 100 mA;
= 0 V;
F
= 10 mA to
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.225
-
Typ
19
14
12
0.24
0.25
0.26
0.17
0.18
0.19
0.08
0.09
0.10
0.05
0.07
0.08
0.27
0.4
BAP55LX
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
3 of 9

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