MT46H64M16LFCK-5:A Micron Technology Inc, MT46H64M16LFCK-5:A Datasheet - Page 93

• Manufacturer Part Number: MT46H64M16LFCK-5:A
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-5:A

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 130mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Revision History
Rev. L – 04/10
Rev. K – 07/09
Rev. J – 06/09
Rev. I – 03/09
Rev. H – 02/09
Rev. G – 06/08
Rev. F – 04/08
Rev. F – 04/08
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
•
• Changed
• Modified I
• Added a note to the
• Added a second paragraph to SELF REFRESH (page 38).
• Added
• Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13).
• Updated step 1 and added Figure 16 (page 47) in Initialization (page 45).
• Updated Status Read Register (page 54).
• Deleted 80Ω from Output Drive Strength (page 53)
• Tightened tRFC to 110ns from 125ns in Table 10, "Electrical Characteristics and Rec-
• Updated IDD specifications
• Updated IDD2N and IDD2NS specifications for -75 and -6 speed grade options in Ta-
• Updated 85°C standard specifications in Table 9, “Idd6 Specifications and Condi-
• Added “L” low-power option
• Added burst length of 16 and note reference to “Features”
• Updated values in Table 6, “Capacitance (x16, x32)”
t
ommended AC Operating Conditions"
ble 7, “Idd Specifications and Conditions (x16)” and Table 8, “Idd Specifications and
Conditions (x32)”
tions" for full, half, and quarter-array PASR operation
– Figure 1: “1Gb Mobile DDR Part Numbering”
– Table 9, “Idd6 Specifications and Conditions”
– Removed 70°C and 15°C values from Table 9, “Idd6 Specifications and Conditions”
XSR value changed from 138ns to 132ns for all speed grades Table 10 (page 24).
as they are redundant and provided in Figure 8: “Typical Self Refresh Current vs.
Temperature”
t
CKE line to Figure 49 (page 88).
t
RC min value for -75 from 75ns to 67.5ns in Table 10 (page 24).
DD8
description for Table 7 (page 20) and Table 8 (page 21).
t
CKE symbol in Table 10 (page 24).
93
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Revision History