STP4N52K3 STMicroelectronics, STP4N52K3 Datasheet - Page 8

• Manufacturer Part Number: STP4N52K3
• Description: MOSFET N-CH 525V 2.5A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N52K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 334pF @ 100V
• Power - Max: 45W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11232-5

Electrical characteristics
8/17
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
V
GS(th)
(norm)
0.8
0.9
0.6
0.5
V
1.0
0.7
1.1
0.7
0.6
0.5
0.8
0.4
0.9
(V)
1.0
SD
-75
0
vs temperature
characteristics
T
J
0.5
-25
=150°C
1
25
1.5
75
T
2
J
=-50°C
T
125
J
=25°C
2.5
Doc ID 18206 Rev 1
AM08646v1
AM08649v1
I
T
SD
J
(°C)
(A)
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
Figure 15. Normalized on resistance vs
Figure 17. Maximum avalanche energy vs
E
R
AS
DS(on)
(norm)
(mJ)
2.5
2.0
1.5
1.0
0.5
120
100
80
60
40
20
0
-75
0
0
temperature
starting Tj
20
-25
40
25
60
V
80
I
D
DD
75
=2.5 A
=50 V
100
125
120 140
AM08647v1
AM08650v1
T
J
(°C)
T
J
(°C)