STH270N4F3-6 STMicroelectronics, STH270N4F3-6 Datasheet

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STH270N4F3-6

Manufacturer Part Number
STH270N4F3-6
Description
MOSFET N-CH 40V 180A H2PAK-6
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STH270N4F3-6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
7400pF @ 25V
Power - Max
300W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11218-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STH270N4F3-6
Manufacturer:
ST
0
Part Number:
STH270N4F3-62
Manufacturer:
ST
0
Part Number:
STH270N4F3-6ES
Manufacturer:
ST
0
Features
1. Current limited by package
Applications
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performance.
Table 1.
January 2010
STH270N4F3-6
Conduction losses reduced
Low profile, very low parasitic inductance, high
current package
Switching application
– Automotive
Type
STH270N4F3-6
Order code
Device summary
V
40 V
DSS
< 1.7 mΩ
R
DS(on)
270N4F3
Marking
N-channel 40 V, 1.40 mΩ , 180 A, H
180 A
Doc ID 16957 Rev 1
I
D
(1)
Figure 1.
STripFET™ III Power MOSFET
Package
H
2
PAK
Internal schematic diagram
TAB
STH270N4F3-6
H
2
PAK-6l
1
Tape and reel
Packaging
7
www.st.com
2
PAK
1/13
13

Related parts for STH270N4F3-6

STH270N4F3-6 Summary of contents

Page 1

... Order code STH270N4F3-6 January 2010 N-channel 40 V, 1.40 mΩ , 180 A, H STripFET™ III Power MOSFET ( DS(on) D < 1.7 mΩ 180 A Figure 1. Marking 270N4F3 Doc ID 16957 Rev 1 STH270N4F3-6 TAB PAK-6l Internal schematic diagram Package Packaging 2 H PAK Tape and reel 2 PAK 1/13 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 16957 Rev 1 STH270N4F3-6 ...

Page 3

... STH270N4F3-6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) Drain current (continuous Drain current (continuous (1) Drain current (pulsed (2) Total dissipation TOT Derating factor (3) Single pulse avalanche energy Storage temperature stg T Operating junction temperature j 1. Current limited by package 2 ...

Page 4

... MHz 20V 160A 10V GS (see Figure 14) Parameter Test conditions V = 20V 4.7Ω (see Figure 13 20V 4.7Ω (see Figure 13) Doc ID 16957 Rev 1 STH270N4F3-6 Min. Typ =125° 1.40 Min. Typ. 200 7400 =0 1800 GS 50 110 30 25 Min. Typ. = 80A 10V, GS 180 ...

Page 5

... STH270N4F3-6 Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Tj=175°C Tc=25°C Single pulse 100µs 1ms 10ms (V) DS Figure 5. AM01502v1 I (A) D 450 400 5V 350 300 250 200 150 100 ( Figure 7. AM00891v2 120 I (A) D Doc ID 16957 Rev 1 STH270N4F3-6 Thermal impedance Transfer characteristics V = =25° Normalized B vs temperature VDSS AM01503v1 V (V) GS ...

Page 7

... STH270N4F3-6 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics V (V) SD 0.95 T =-50°C J 0.90 0.85 0.80 T =25°C J 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0. 100 120 140 160 180 40 Figure 11. Normalized on resistance vs ...

Page 8

... Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform Doc ID 16957 Rev 1 STH270N4F3-6 ...

Page 9

... STH270N4F3-6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. H²PAK 6 leads mechanical data Dim Min. ...

Page 10

... Package mechanical data Figure 19. H²PAK 6 leads drawing Figure 20. H²PAK 6 leads recommended footprint (dimensions in mm) 10/13 Doc ID 16957 Rev 1 STH270N4F3-6 ...

Page 11

... STH270N4F3-6 5 Packaging mechanical data Figure 21. H²PAK 6 leads tape and reel TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2 0.25 0.35 0.0098 0.0137 W 23.7 24 ...

Page 12

... Revision history 6 Revision history Table 9. Document revision history Date 15-Jan-2010 12/13 Revision 1 Initial release Doc ID 16957 Rev 1 STH270N4F3-6 Changes ...

Page 13

... STH270N4F3-6 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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