STL26NM60N STMicroelectronics, STL26NM60N Datasheet - Page 6

• Manufacturer Part Number: STL26NM60N
• Description: MOSFET N-CH 600V 19A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 125mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11207-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
0.1
BV
(A)
10
I
D
1
(norm)
0.93
1.07
1.05
1.03
0.99
0.95
1.01
0.97
0.1
DSS
-50
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
-25
1
0
I
25
D
10
=1mA
VDSS
50
75
100
vs temperature
100
V
DS
T
(V)
J
(°C)
Doc ID 18472 Rev 1
10ms
100µs
10µs
1ms
Tj=150°C
Tc=25°C
Single pulse
AM08987v1
AM08988v1
Figure 3.
Figure 5.
Figure 7.
10
10
R
0.168
0.166
0.164
0.152
0.162
0.160
0.158
0.156
0.154
10
DS(on)
K
-2
-1
(Ω)
-5
δ=0.5
Single pulse
0.2
0.1
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
10
0.01
4
-4
V
6
GS
0.02
=10V
8
10
0.05
-3
10
Zth PowerFLAT 8x8 HV
12 14 16 18 20
10
-2
STL26NM60N
t
p
(s)
AM08989v1
I
D
(A)