STP180N10F3 STMicroelectronics, STP180N10F3 Datasheet - Page 7

• Manufacturer Part Number: STP180N10F3
• Description: MOSFET N-CH 100V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP180N10F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.1 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11228-5

STH180N10F3-2, STP180N10F3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
R
(norm)
V
DS(on)
GS(th)
V
(V)
0.9
(Ω)
1.3
1.1
0.5
0.3
0.7
4.0
4.8
12
10
4.6
4.4
4.2
GS
6
2
8
4
0
-75
0
0
Static drain-source on resistance
for TO-220
vs temperature
20
20
-25
40
40
V
I
25
D
60
DD
V
=120A
60
GS
=50V
=10V
80
I
75
D
=250µA
80
100
100
125
120 140
120
175
Doc ID 14933 Rev 3
AM08620v1
AM08622v1
AM08619v1
Q
T
I
D
g
J
(nC)
(A)
(°C)
Figure 9.
Figure 13. Normalized on resistance vs
10000
R
20000
15000
R
5000
DS(on)
DS(on)
(norm)
(pF)
(Ω)
3.6
4.0
3.7
3.9
3.8
4.2
4.1
1.7
1.5
1.3
1.1
0.9
0.7
1.9
0.5
C
2.1
0
-75
0
0
Static drain-source on resistance
for H²PAK
temperature
20
20
-25
40
Crss
V
I
60
GS
D
40
=60A
=10V
25
V
80
Electrical characteristics
GS
100
60
=10V
75
120
80
140 160 180
Coss
125
100
Ciss
175
V
AM08623v1
AM08621v1
DS
AM08626v1
I
D
(V)
T
(A)
J
(°C)
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