IXFX98N50P3 IXYS, IXFX98N50P3 Datasheet - Page 3

• Manufacturer Part Number: IXFX98N50P3
• Description: MOSFET N-CH 500V 98A PLUS247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFX98N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13100pF @ 25V
• Power - Max: 1300W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 98
• Rds(on), Max, Tj=25°c, (?): 0.05
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1300
• Rthjc, Max, (ºc/w): 0.096
• Package Style: PLUS247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
100
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
0
V
GS
20
Fig. 5. R
= 10V
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
2
1
40
DS(on)
4
60
2
Normalized to I
Drain Current
80
I
6
D
V
V
DS
- Amperes
DS
100
- Volts
- Volts
3
V
V
GS
8
GS
120
= 10V
= 10V
D
7V
8V
6V
4V
= 49A Value vs.
5V
4
T
140
J
10
7V
6V
5V
= 125ºC
J
J
= 25ºC
= 125ºC
160
5
12
T
J
180
= 25ºC
200
14
6
200
180
160
140
120
100
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
-50
0
0
-50
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
V
Junction Temperature
GS
Case Temperature
T
Normalized to I
T
= 10V
J
C
25
25
- Degrees Centigrade
8V
10
- Degrees Centigrade
V
DS
7V
6V
5V
50
50
- Volts
15
D
IXFK98N50P3
75
IXFX98N50P3
75
= 49A Value vs.
I
D
= 98A
100
100
20
J
= 25ºC
I
125
125
D
= 49A
150
150
25