STM32L151VBT6 STMicroelectronics, STM32L151VBT6 Datasheet - Page 87

• Manufacturer Part Number: STM32L151VBT6
• Description: MCU ARM 128KB FLASH 100LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32L151VBT6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 83
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LFQFP
• Processor Series: STM32L151
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 80
• Number Of Timers: 6
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11195

STM32L151xx, STM32L152xx
Figure 25. ADC accuracy characteristics
Figure 26. Typical connection diagram using the ADC
1. Refer to
2. C
pad capacitance (roughly 7 pF). A high C
this, f
parasitic
4095
4094
4093
7
6
5
4
3
2
1
ADC
0
V
SSA
[1LSB
Table 49
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
should be reduced.
1
E
IDEAL
O
2
for the values of R
=
V
4096
3
REF+
4
(or
V
5
1 LSB
4096
DDA
E
6
Doc ID 17659 Rev 4
T
depending on package)]
IDEAL
AIN
E
7
L
, R
(2)
parasitic
ADC
E
D
and C
4093 4094 4095 4096
value will downgrade conversion accuracy. To remedy
(3)
ADC
(1)
.
E
G
V
DDA
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
T
O
G
D
L
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Differential Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
Electrical characteristics
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