ADF4360-2BCPZ Analog Devices Inc, ADF4360-2BCPZ Datasheet - Page 6

IC SYNTHESIZER/VCO 24-LFCSP

ADF4360-2BCPZ

Manufacturer Part Number
ADF4360-2BCPZ
Description
IC SYNTHESIZER/VCO 24-LFCSP
Manufacturer
Analog Devices Inc
Type
Fanout Distribution, Integer N Synthesizer (RF)r
Datasheet

Specifications of ADF4360-2BCPZ

Pll
Yes
Input
CMOS
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
2.17GHz
Divider/multiplier
Yes/No
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
24-LFCSP
Frequency-max
2.15GHz
Pll Type
Frequency Synthesis
Frequency
2.17GHz
Supply Current
10mA
Supply Voltage Range
3V To 3.6V
Digital Ic Case Style
LFCSP
No. Of Pins
24
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
EVAL-ADF4360-2EBZ1 - BOARD EVALUATION FOR ADF4360-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ADF4360-2
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature
CSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
GND = AGND = DGND = 0 V.
VCO
VCO
A
Maximum Junction Temperature
Paddle Soldered
Paddle Not Soldered
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
Thermal Impedance
DD
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
150°C
50°C/W
88°C/W
215°C
220°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. B | Page 6 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those included in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV; it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12,543 (CMOS) and 700 (Bipolar).

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