DAC1003D160HW/C1,5 NXP Semiconductors, DAC1003D160HW/C1,5 Datasheet - Page 8

IC DAC 10BIT 160MSPS 80-HTQFP

DAC1003D160HW/C1,5

Manufacturer Part Number
DAC1003D160HW/C1,5
Description
IC DAC 10BIT 160MSPS 80-HTQFP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of DAC1003D160HW/C1,5

Settling Time
16ns
Number Of Bits
10
Data Interface
Parallel
Number Of Converters
2
Voltage Supply Source
Analog and Digital
Power Dissipation (max)
540mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
80-TQFP Exposed Pad, 80-eTQFP, 80-HTQFP, 80-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935286682518
DAC1003D160HW/C1-T
DAC1003D160HW/C1-T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DAC1003D160HW/C1,5
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
NXP Semiconductors
Table 5.
V
V
Figure
DAC1003D160_2
Product data sheet
Symbol
I
P
Clock inputs (CLK and CLKN)
V
V
Analog outputs (IOUT, IOUTN, QOUT and QOUTN)
I
R
C
Digital inputs (I0 to I9, Q0 to Q9 and GAPD)
V
V
I
I
Reference voltage output (GAPOUT)
V
I
Clock timing inputs (CLK and CLKN)
f
t
t
Input timing (I0 to I9 and Q0 to Q9); see
t
t
Output timing (IOUT, IOUTN, QOUT, QOUTN)
t
Digital filter specification (FIR); order N = 42 see
f
B
t
Analog signal processing
INL
DNL
CCA
O(fs)
IL
IH
GAPOUT
clk
w(clk)H
w(clk)L
h(i)
su(i)
s
data
d(grp)
CCD
CCD
V
ripple(pb)
stpb
tot
I(cm)
i(dif)(p-p)
IL
IH
GAPOUT
p
o
o
GAPOUT
= V
= V
10; unless otherwise specified.
CCA
CCA
Characteristics
Parameter
analog supply current
total power dissipation
common-mode input
voltage
peak-to-peak differential
input voltage
full-scale output current
output resistance
output capacitance
LOW-level input voltage
HIGH-level input voltage
LOW-level input current
HIGH-level input current
voltage on pin GAPOUT
current on pin GAPOUT
voltage variation on pin
GAPOUT
clock frequency
HIGH clock pulse width
LOW clock pulse width
input hold time
input set-up time
settling time
data rate
pass-band ripple
power bandwidth
stop-band attenuation
group delay time
integral non-linearity
differential non-linearity
= 3.0 V to 3.6 V; AGND and DGND connected together; T
= 3.3 V, I
O(fs)
= 20 mA and T
…continued
Conditions
f
f
differential outputs
V
V
external voltage
t
f
f
f
amb
clk
IOUT
o
data
data
data
IL
IH
Figure 5
= 80 MHz;
= 0.3 V
0.5 LSB
= 0.7 V
/f
/f
/f
= 25 C; dynamic parameters measured using output schematic given in
clk
clk
clk
= f
; 0.005 dB attenuation
; 3 dB attenuation
QOUT
= 0.6 dB to 1 dB
Rev. 02 — 13 August 2008
CCD
CCD
Figure 6
= 5 MHz
and
Dual 10 bits DAC, up to 160 MHz, 2 x interpolation
7
and
amb
Table 7
= 40 C to +85 C; typical values measured at
[1]
[1]
[1]
Min
-
-
-
-
4
-
-
DGND
0.7 V
-
-
-
-
-
5
5
1.1
-
-
-
-
-
-
-
-
1.5
CCD
DAC1003D160
Typ
73
422
1.65
1.0
-
150
3
-
-
5
5
1.31
1
-
-
-
-
-
16
-
0.405
0.479
69
11 T
133
0.2
0.1
clk
Max
85
540
-
-
20
-
-
0.3 V
V
-
-
-
-
-
3.4
+0.7
-
80
-
-
-
-
-
-
80
-
-
CCD
© NXP B.V. 2008. All rights reserved.
CCD
Unit
mA
mW
V
V
mA
k
pF
V
V
V
ppm/ C
MHz
ns
ns
ns
ns
ns
MHz
dB
ns
LSB
LSB
A
A
A
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