MT46H16M32LFCM-6 AT:B Micron Technology Inc, MT46H16M32LFCM-6 AT:B Datasheet - Page 63

• Manufacturer Part Number: MT46H16M32LFCM-6 AT:B
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCM-6 AT:B

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 25: Nonconsecutive READ Bursts
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecu-
tive READs.
OUT
CL = 2
NOP
NOP
T1
T1
n (or b) = data-out from column n (or column b).
CL = 3
T1n
T1n
D
OUT
NOP
NOP
T2
T2
1
t
AC,
D
OUT
T2n
T2n
63
t
DQSCK, and
D
512Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
READ
Bank,
READ
Bank,
Col b
Col b
OUT
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
T3n
T3n
t
OUT
DQSQ.
OUT
CL = 2
D
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
D
T4n
T4n
OUT
© 2004 Micron Technology, Inc. All rights reserved.
T5
T5
NOP
NOP
D
OUT
READ Operation
Transitioning Data
T5n
T5n
D
OUT
T6
T6
NOP
NOP
D
D
OUT
OUT