MT18HTF12872AY-667F1 Micron Technology Inc, MT18HTF12872AY-667F1 Datasheet

MT18HTF12872AY-667F1

Manufacturer Part Number
MT18HTF12872AY-667F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18HTF12872AY-667F1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
45ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.683A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
DDR2 SDRAM Unbuffered DIMM (UDIMM)
MT18HTF6472A – 512MB
MT18HTF12872A – 1GB
MT18HTF25672A – 2GB
MT18HTF51272A – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 512MB (64 Meg x 72), 1GB (128 Meg x 72),
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Supports ECC error detection and correction
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
PC2-5300, or PC2-6400
2GB (256 Meg x 72), 4GB (512 Meg x 72)
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
t
CK
CL = 6
800
1
CL = 5
Data Rate (MT/s)
667
667
800
www.micron.com
1
Figure 1:
Notes: 1. Contact Micron for availability of the 4GB
Height 30.0mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
CL = 4
533
533
533
400
533
– Commercial (0°C ≤ T
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18 in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not available in 512MB module density.
device.
module offerings.
CL = 3
400
400
400
240-Pin UDIMM
(MO-237 R/C G or R/C B)
t
(ns)
12.5
RCD
C
15
15
15
15
2
≤ +85°C)
©2003 Micron Technology, Inc. All rights reserved.
3
3
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
Y
(ns)
t
55
55
55
55
55
RC

Related parts for MT18HTF12872AY-667F1

MT18HTF12872AY-667F1 Summary of contents

Page 1

... MT18HTF25672A – 2GB MT18HTF51272A – 4GB For component data sheets, refer to Micron’s Web site: Features • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...

Page 2

... Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT47H64M8 Module 1 Part Number Density MT18HTF12872AY-80E__ MT18HTF12872AY-800__ MT18HTF12872AY-667__ MT18HTF12872AY-53E__ MT18HTF12872AY-40E__ Table 5: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M8 Module 1 Part Number Density MT18HTF25672AY-80E__ MT18HTF25672AY-800__ MT18HTF25672AY-667__ MT18HTF25672AY-53E__ ...

Page 3

... MT18HTF51272AY-53E__ MT18HTF51272AY-40E__ Notes: 1. All part numbers end with a two-place code (not shown) that designating component and PCB revisions. Consult factory for current revision codes. Example: MT18HTF12872AY- 667D4. 2. For component data sheets, refer to Micron’s Web PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN ...

Page 4

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Pin Assignments and Descriptions Table 7: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF ...

Page 5

... I/O Data input/output: Bidirectional data bus. (SSTL_18) CB0–CB7 I/O Check bits. (SSTL_18) SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module Supply Power supply: 1.8V ±0.1V Supply SSTL_18 reference voltage ...

Page 6

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Functional Block Diagram Figure 2: Functional Block Diagram S1# S0 DQS0 DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 ...

Page 7

... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes can be programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

... Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’s Web site at www.micron.com. Module speed grades correlate with component speed grades, as shown in Table 10. Table 10: Module and Component Speed Grade Table ...

Page 9

... HIGH HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A ...

Page 10

... HIGH HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A ...

Page 11

... HIGH HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A ...

Page 12

... HIGH HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A ...

Page 13

... HIGH HIGH between valid commands; Address bus inputs are stable during DESELECTs; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition and all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A ...

Page 14

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Serial Presence-Detect Table 16: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic ...

Page 15

... Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = MAX value, see byte 18) ...

Page 16

... Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery time, ...

Page 17

... Week of manufacture in BCD 95–98 Module serial number 99–127 Reserved for manufacturer-specific data 128–255 Reserved for customer use Notes: 1. The 512MB module is not available in -80E and -800 speed grades. 2. The DDR2 device specification is PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN Entry (Version) – ...

Page 18

... TYP BACK VIEW U13 U14 U15 U16 U17 5.0 (0.197) TYP 63.0 (2.48) TYP ® 18 Module Dimensions U8 U9 30.50 (1.200) 29.85 (1.175) 17.78 (0.700) TYP 10.00 (0.394) TYP PIN 120 U18 U19 PIN 121 Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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